A method of forming nanotube contact structures may include forming an interconnect layer over a portion of a layer of a microelectronics device and forming a nanotube layer over a portion of the interconnect layer. The nanotube layer may define openings through the nanotube layer. The method also may include forming self-aligned electrodes in the openings of the nanotube layer such that the self-aligned electrodes are formed only in openings in the nanotube layer that substantially reside over metal filled vias of the microelectronics device. In some examples, the self-aligned electrodes may be formed on the metal in the vias, and the self-aligned electrodes may not be formed in openings that do not reside over the metal filled vias.