Invention Grant
- Patent Title: Boron doped single crystal diamond electrochemical synthesis electrode
- Patent Title (中): 硼掺杂单晶金刚石电化学合成电极
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Application No.: US10977267Application Date: 2004-10-29
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Publication No.: US08974599B2Publication Date: 2015-03-10
- Inventor: Robert C. Linares , Patrick J. Doering
- Applicant: Robert C. Linares , Patrick J. Doering
- Applicant Address: US SC Greer
- Assignee: SCIO Diamond Technology Corporation
- Current Assignee: SCIO Diamond Technology Corporation
- Current Assignee Address: US SC Greer
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: C30B29/02
- IPC: C30B29/02 ; C30B25/02 ; C30B25/10

Abstract:
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described., as well as a system for use in performing such a method, and articles incorporating such a composition.
Public/Granted literature
- US20050109262A1 Boron doped single crystal diamond electrochemical synthesis electrode Public/Granted day:2005-05-26
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