Invention Grant
- Patent Title: Deposit protection cover and plasma processing apparatus
- Patent Title (中): 沉积保护盖和等离子体处理装置
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Application No.: US12843149Application Date: 2010-07-26
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Publication No.: US08974600B2Publication Date: 2015-03-10
- Inventor: Toshihiko Oyama
- Applicant: Toshihiko Oyama
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2009-175777 20090728
- Main IPC: C23C16/44
- IPC: C23C16/44 ; H01J37/32

Abstract:
A deposit protection cover and a plasma processing apparatus provide a simple solution to deposits adhered to a portion originally considered to be unreachable by plasma without increasing manufacturing cost. The deposit protection cover is detachably installed within a processing chamber for processing a substrate by generating plasma therein so as to cover a preset portion of the processing chamber. The cover includes an aluminum plate having a surface on which an anodic oxidation process is performed. Further, the anodic oxidation process is performed by using an electrode part protruded from a cover main body, an exposed area of an aluminum base surface is reduced by removing the electrode part after the anodic oxidation process is performed, and a cut surface formed after removing the electrode part is positioned at a region that is not directly exposed to the plasma within the processing chamber.
Public/Granted literature
- US20110024040A1 DEPOSIT PROTECTION COVER AND PLASMA PROCESSING APPARATUS Public/Granted day:2011-02-03
Information query
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