Invention Grant
- Patent Title: Combinatorial RF bias method for PVD
- Patent Title (中): PVD的组合RF偏置方法
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Application No.: US13316882Application Date: 2011-12-12
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Publication No.: US08974649B2Publication Date: 2015-03-10
- Inventor: ShouQian Shao , Kent Riley Child , James Tsung , Hong Sheng Yang
- Applicant: ShouQian Shao , Kent Riley Child , James Tsung , Hong Sheng Yang
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C25B11/00 ; C25B13/00

Abstract:
In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.
Public/Granted literature
- US20130149469A1 COMBINATORIAL RF BIAS METHOD FOR PVD Public/Granted day:2013-06-13
Information query
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