Invention Grant
US08974683B2 Method and system for modifying resist openings using multiple angled ions
有权
使用多角度离子修饰抗蚀剂孔的方法和系统
- Patent Title: Method and system for modifying resist openings using multiple angled ions
- Patent Title (中): 使用多角度离子修饰抗蚀剂孔的方法和系统
-
Application No.: US13228625Application Date: 2011-09-09
-
Publication No.: US08974683B2Publication Date: 2015-03-10
- Inventor: Ludovic Godet , Patrick M. Martin , Joseph C. Olson , Andrew J. Hornak
- Applicant: Ludovic Godet , Patrick M. Martin , Joseph C. Olson , Andrew J. Hornak
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/027 ; H01J37/32 ; G03F7/40

Abstract:
A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.
Public/Granted literature
- US20130062309A1 METHOD AND SYSTEM FOR MODIFYING RESIST OPENINGS USING MULTIPLE ANGLED IONS Public/Granted day:2013-03-14
Information query
IPC分类: