Invention Grant
- Patent Title: Method for making strip shaped graphene layer
- Patent Title (中): 制造带状石墨烯层的方法
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Application No.: US13730859Application Date: 2012-12-29
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Publication No.: US08974867B2Publication Date: 2015-03-10
- Inventor: Xiao-Yang Lin , Kai-Li Jiang , Shou-Shan Fan
- Applicant: Tsinghua University , Hon Hai Precision Industry Co., Ltd.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201210096865 20120405
- Main IPC: C23C14/18
- IPC: C23C14/18 ; C23C14/48 ; C23C14/06 ; C23C14/58

Abstract:
A method for making a strip shaped graphene layer includes the following steps. First, a carbon nanotube structure on a surface of a metal substrate is provided. The carbon nanotube structure includes at least one drawn carbon nanotube film. The at least one drawn carbon nanotube film includes a number of carbon nanotube segments, each of the number of carbon nanotube segments being substantially parallel to each other and separated from each other by a strip-shaped gap. Second, carbon ions are implanted into the metal substrate through the strip-shaped gaps. Third, the metal substrate is annealed to obtain the strip shaped graphene layer.
Public/Granted literature
- US20130266738A1 METHOD FOR MAKING STRIP SHAPED GRAPHENE LAYER Public/Granted day:2013-10-10
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