Invention Grant
- Patent Title: Post deposition plasma cleaning system and method
- Patent Title (中): 后沉积等离子体清洗系统及方法
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Application No.: US11084176Application Date: 2005-03-21
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Publication No.: US08974868B2Publication Date: 2015-03-10
- Inventor: Tadahiro Ishizaka , Audunn Ludviksson
- Applicant: Tadahiro Ishizaka , Audunn Ludviksson
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H05H1/00
- IPC: H05H1/00 ; C23C16/455 ; H01J37/32 ; C23C16/34 ; H01L21/768 ; C23C16/30 ; H01L21/314 ; H01L21/285 ; H01L21/3205 ; C23C16/14 ; C23C16/509 ; H01L21/316 ; H01L21/318
Abstract:
A method for processing a substrate includes disposing the substrate in a deposition chamber configured to perform a deposition process and depositing a film on the substrate using the deposition process. The substrate having the film thereon is then transferred from the deposition chamber into a treatment chamber and a plasma cleaning process is performed on the substrate in the treatment chamber. Further processing of the substrate is performed after the plasma cleaning process.
Public/Granted literature
- US20060211243A1 Deposition system and method Public/Granted day:2006-09-21
Information query
