Invention Grant
US08975002B2 Positive resist composition for immersion exposure and pattern forming method
有权
用于浸渍曝光和图案形成方法的正型抗蚀剂组合物
- Patent Title: Positive resist composition for immersion exposure and pattern forming method
- Patent Title (中): 用于浸渍曝光和图案形成方法的正型抗蚀剂组合物
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Application No.: US13967402Application Date: 2013-08-15
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Publication No.: US08975002B2Publication Date: 2015-03-10
- Inventor: Kei Yamamoto , Hiroshi Saegusa
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-249216 20080926; JP2009-219717 20090924
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/028 ; G03F7/26 ; G03F7/039 ; C09D133/16 ; C09D133/26 ; C09D143/04 ; G03F7/075 ; G03F7/20

Abstract:
A positive resist composition for immersion exposure includes the following (A) to (D): (A) a resin capable of decomposing by an action of an acid to increase a solubility of the resin in an alkali developer; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a resin having at least either one of a fluorine atom and a silicon atom; and (D) a mixed solvent containing at least one kind of a solvent selected from the group consisting of solvents represented by any one of the following formulae (S1) to (S3) as defined in the specification, in which a total amount of the at least one kind of the solvent is from 3 to 20 mass % based on all solvents of the mixed solvent (D).
Public/Granted literature
- US20130337384A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD Public/Granted day:2013-12-19
Information query
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