Invention Grant
US08975113B2 Method for manufacturing semiconductor device and method for growing graphene
有权
制造半导体器件的方法和用于生长石墨烯的方法
- Patent Title: Method for manufacturing semiconductor device and method for growing graphene
- Patent Title (中): 制造半导体器件的方法和用于生长石墨烯的方法
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Application No.: US14140432Application Date: 2013-12-24
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Publication No.: US08975113B2Publication Date: 2015-03-10
- Inventor: Kenjiro Hayashi , Shintaro Sato
- Applicant: Fujitsu Limited
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66 ; B82Y10/00 ; H01L29/786 ; H01L51/00 ; H01L51/05 ; H01L21/02
Abstract:
A catalyst film (2) is formed over a substrate (1). A graphene (3) is grown on the catalyst film (2). A gap through which a lower surface of the catalyst film (2) is exposed is formed. The catalyst film (2) is removed through the gap.
Public/Granted literature
- US20140106514A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR GROWING GRAPHENE Public/Granted day:2014-04-17
Information query
IPC分类:
