A method of fabricating a fin-like field-effect transistor (FinFET) device is disclosed. A plurality of mandrel features are formed on a substrate. First spacers are formed along sidewalls of the mandrel feature and second spacers are along sidewalls of the first spacers. Two back-to-back adjacent second spacers separate by a gap in a first region and merge together in a second region of the substrate. A dielectric feature is formed in the gap and a dielectric mesa is formed in a third region of the substrate. A first subset of the first spacer is removed in a fine cut. Fins and trenches are formed by etching the substrate using the first spacer and the dielectric feature as an etch mask.