Semiconductor device with isolation layer, electronic device having the same, and method for fabricating the same

Invention Grant

US08975132B2 Semiconductor device with isolation layer, electronic device having the same, and method for fabricating the same 有权

Title translation: 具有隔离层的半导体器件，具有该隔离层的电子器件及其制造方法

Please log in to see more content

Patent Title: Semiconductor device with isolation layer, electronic device having the same, and method for fabricating the same
Patent Title (中): 具有隔离层的半导体器件，具有该隔离层的电子器件及其制造方法
Application No.: US14308323

Application Date: 2014-06-18
Publication No.: US08975132B2

Publication Date: 2015-03-10
Inventor: Hyung-Hwan Kim , Bong-Ho Choi , Jin-Yul Lee , Seung-Seok Pyo
Applicant: SK Hynix Inc.
Applicant Address: KR Gyeonggi-do
Assignee: SK Hynix Inc.
Current Assignee: SK Hynix Inc.
Current Assignee Address: KR Gyeonggi-do
Agency: IP & T Group LLP
Priority: KR10-2012-0030529 20120326
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L21/762 ; H01L27/108

Semiconductor device with isolation layer, electronic device having the same, and method for fabricating the same

Abstract:

A semiconductor device with an isolation layer buried in a trench includes an interface layer formed on the surface of the trench, a buffer layer formed in the interface layer at a bottom corner of the trench, a liner layer formed over the interface layer, and a gap-fill layer gap-filling the trench over the liner layer. The trench includes a micro-trench formed at the bottom corner thereof, and the buffer layer fills the micro-trench.

Abstract(Chinese):

埋置在沟槽中的具有隔离层的半导体器件包括形成在沟槽表面上的界面层，形成在沟槽底部拐角处的界面层中的缓冲层，形成在界面层上的衬层，以及间隙填充层间隙填充衬里层上的沟槽。沟槽包括形成在其底角处的微沟槽，并且缓冲层填充微沟槽。

Public/Granted literature

US20140302663A1 SEMICONDUCTOR DEVICE WITH ISOLATION LAYER, ELECTRONIC DEVICE HAVING THE SAME, AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-10-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS