Capacitors positioned at the device level in an integrated circuit product and methods of making such capacitors

Invention Grant

US08975133B2 Capacitors positioned at the device level in an integrated circuit product and methods of making such capacitors 有权

Title translation: 集成电路产品中位于器件级的电容器和制造这种电容器的方法

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Patent Title: Capacitors positioned at the device level in an integrated circuit product and methods of making such capacitors
Patent Title (中): 集成电路产品中位于器件级的电容器和制造这种电容器的方法
Application No.: US13568802

Application Date: 2012-08-07
Publication No.: US08975133B2

Publication Date: 2015-03-10
Inventor: Kok Yong Yiang , Patrick R. Justison
Applicant: Kok Yong Yiang , Patrick R. Justison
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES Inc.
Current Assignee: GLOBALFOUNDRIES Inc.
Current Assignee Address: KY Grand Cayman
Agency: Amerson Law Firm, PLLC
Main IPC: H01L21/8242
IPC: H01L21/8242

Capacitors positioned at the device level in an integrated circuit product and methods of making such capacitors

Abstract:

One illustrative integrated circuit product disclosed herein includes a metal-1 metallization layer positioned above a semiconducting substrate, a capacitor positioned between a surface of the substrate and a bottom of the metal-1 metallization layer, wherein the capacitor includes a plurality of conductive plates that are oriented in a direction that is substantially normal relative to the surface of the substrate, and at least one region of insulating material positioned between the plurality of conductive plates.

Abstract(Chinese):

本文公开的一种说明性的集成电路产品包括位于半导体衬底上方的金属-1金属化层，位于衬底的表面和金属-1金属化层的底部之间的电容器，其中电容器包括多个导电板，在相对于基板的表面基本正常的方向上定向，以及定位在多个导电板之间的绝缘材料的至少一个区域。

Public/Granted literature

US20140042510A1 CAPACITORS POSITIONED AT THE DEVICE LEVEL IN AN INTEGRATED CIRCUIT PRODUCT AND METHODS OF MAKING SUCH CAPACITORS Public/Granted day:2014-02-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）