Invention Grant
- Patent Title: Semiconductor device having passing gate and method for fabricating the same
- Patent Title (中): 具有通孔的半导体器件及其制造方法
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Application No.: US14167849Application Date: 2014-01-29
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Publication No.: US08975140B2Publication Date: 2015-03-10
- Inventor: Woo Young Chung
- Applicant: SK Hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2013-0090876 20130731
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78 ; H01L21/762
Abstract:
A semiconductor device includes passing gates. In the semiconductor device, a passing gate formed in a device isolation film is vertically positioned at a deeper and lower level than an operation gate formed in an active region defined by the device isolation film such that the passing gate does not overlap with a junction region. A step difference is formed in a storage node junction region, and thus a contact area between a storage node contact and the storage node junction region is increased, resulting in the improvement of operational characteristics of the semiconductor device.
Public/Granted literature
- US20150035022A1 SEMICONDUCTOR DEVICE HAVING PASSING GATE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-02-05
Information query
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