Invention Grant
US08975141B2 Dual work function FinFET structures and methods for fabricating the same
有权
双功能功能FinFET结构及其制造方法
- Patent Title: Dual work function FinFET structures and methods for fabricating the same
- Patent Title (中): 双功能功能FinFET结构及其制造方法
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Application No.: US13563202Application Date: 2012-07-31
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Publication No.: US08975141B2Publication Date: 2015-03-10
- Inventor: Andy C. Wei , Bin Yang , Francis M. Tambwe
- Applicant: Andy C. Wei , Bin Yang , Francis M. Tambwe
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method for fabricating a dual-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure, depositing a low-resistance material layer over the first workfunction material layer, and etching the low-resistance material layer and the first workfunction material layer from a portion of the FinFET structure. The method further includes depositing a second workfunction material in a layer in a plurality of trenches of the portion and depositing a stress material layer over the second workfunction material layer.
Public/Granted literature
- US20140038402A1 DUAL WORK FUNCTION FINFET STRUCTURES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2014-02-06
Information query
IPC分类:
