Invention Grant
- Patent Title: Method of forming a shallow trench isolation structure
- Patent Title (中): 形成浅沟槽隔离结构的方法
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Application No.: US13938948Application Date: 2013-07-10
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Publication No.: US08975155B2Publication Date: 2015-03-10
- Inventor: Chia-Yi Chuang , Ta-Hsiang Kung , Hsing-Jui Lee , Ming-Te Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/762 ; H01L29/06

Abstract:
Embodiments of the disclosure include a shallow trench isolation (STI) structure and a method of forming the same. A trench is formed in a substrate. A silicon oxide and a silicon liner layer are formed on sidewalls and a bottom surface of the trench. A flowable silicon oxide material fills in the trench, is cured, and then is partially removed. Another silicon oxide is deposited in the trench to fill the trench. The STI structure in a fabricated device includes a bottom portion having silicon oxide and a top portion having additionally a silicon oxide liner and a silicon liner on the sidewalls.
Public/Granted literature
- US20150014807A1 METHOD OF FORMING A SHALLOW TRENCH ISOLATION STRUCTURE Public/Granted day:2015-01-15
Information query
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