Invention Grant
- Patent Title: Carrier bonding and detaching processes for a semiconductor wafer
- Patent Title (中): 用于半导体晶片的载体结合和分离工艺
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Application No.: US13369204Application Date: 2012-02-08
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Publication No.: US08975157B2Publication Date: 2015-03-10
- Inventor: Wei-Min Hsiao
- Applicant: Wei-Min Hsiao
- Applicant Address: TW
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW
- Agency: Morgan Law Offices, PLC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention provides a temporary carrier bonding and detaching process. A first surface of a semiconductor wafer is mounted on a first carrier by a first adhesive, and a first isolation coating is disposed between the first adhesive and the first carrier. Then, a second carrier is mounted on the second surface of the semiconductor wafer. The first carrier is detached. The method of the present invention utilizes the second carrier to support and protect the semiconductor wafer, after which the first carrier is detached. Therefore, the semiconductor wafer will not be damaged or broken, thereby improving the yield rate of the semiconductor process. Furthermore, the simplicity of the detaching method for the first carrier allows for improvement in efficiency of the semiconductor process.
Public/Granted literature
- US20130203265A1 CARRIER BONDING AND DETACHING PROCESSES FOR A SEMICONDUCTOR WAFER Public/Granted day:2013-08-08
Information query
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