Invention Grant
- Patent Title: Method for permanently bonding wafers
- Patent Title (中): 永久性接合晶圆的方法
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Application No.: US14110220Application Date: 2011-04-08
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Publication No.: US08975158B2Publication Date: 2015-03-10
- Inventor: Thomas Plach , Kurt Hingerl , Markus Wimplinger , Christoph Flötgen
- Applicant: Thomas Plach , Kurt Hingerl , Markus Wimplinger , Christoph Flötgen
- Applicant Address: AT St. Florian am Inn
- Assignee: EV Group E. Thallner GmbH
- Current Assignee: EV Group E. Thallner GmbH
- Current Assignee Address: AT St. Florian am Inn
- Agency: Kusner & Jaffe
- International Application: PCT/EP2011/055471 WO 20110408
- International Announcement: WO2012/136268 WO 20121011
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/20 ; H01L21/3105 ; H01L21/762

Abstract:
A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate. The method comprises: forming at least one reservoir in at least one reservoir formation layer on the first substrate and/or the second substrate, the reservoir comprised of an amorphous material, at least partial filling of the reservoir/reservoirs with a first educt or a first group of educts, forming or applying a reaction layer which contains a second educt or a second group of educts to the reservoir and/or the reservoir, the first contact surface making contact with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt or the first group with the second educt or the second group.
Public/Granted literature
- US20140073112A1 METHOD FOR PERMANENTLY BONDING WAFERS Public/Granted day:2014-03-13
Information query
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