Invention Grant
US08975166B2 Method and apparatus for atomic hydrogen surface treatment during GaN epitaxy
有权
GaN外延中原子氢表面处理的方法和装置
- Patent Title: Method and apparatus for atomic hydrogen surface treatment during GaN epitaxy
- Patent Title (中): GaN外延中原子氢表面处理的方法和装置
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Application No.: US13302001Application Date: 2011-11-22
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Publication No.: US08975166B2Publication Date: 2015-03-10
- Inventor: Thai Cheng Chua , Timothy Joseph Franklin , Philip A. Kraus
- Applicant: Thai Cheng Chua , Timothy Joseph Franklin , Philip A. Kraus
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/205
- IPC: H01L21/205 ; H01L21/02 ; C23C16/30 ; C23C16/455
Abstract:
Methods and apparatus for generating and delivering atomic hydrogen to the growth front during the deposition of a III-V film are provided. The apparatus adapts HWCVD technology to a system wherein the Group III precursor and the Group V precursor are delivered to the surface in isolated processing environments within the system. Multiple HWCVD units may be incorporated so that the atomic hydrogen parameters may be varied in a combinatorial manner for the development of III-V films.
Public/Granted literature
- US20130130481A1 METHOD AND APPARATUS FOR ATOMIC HYDROGEN SURFACE TREATMENT DURING GaN EPITAXY Public/Granted day:2013-05-23
Information query
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