Semiconductor device with buried gate and method for fabricating the same

Invention Grant

US08975173B2 Semiconductor device with buried gate and method for fabricating the same 有权

Title translation: 具有埋栅的半导体器件及其制造方法

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Patent Title: Semiconductor device with buried gate and method for fabricating the same
Patent Title (中): 具有埋栅的半导体器件及其制造方法
Application No.: US14149498

Application Date: 2014-01-07
Publication No.: US08975173B2

Publication Date: 2015-03-10
Inventor: Jong-Han Shin , Bo-Min Park
Applicant: SK Hynix Inc.
Applicant Address: KR Gyeonggi-do
Assignee: SK Hynix Inc.
Current Assignee: SK Hynix Inc.
Current Assignee Address: KR Gyeonggi-do
Agency: IP & T Group LLP
Priority: KR10-2010-0128045 20101215
Main IPC: H01L21/3205
IPC: H01L21/3205 ; H01L21/768 ; H01L27/108 ; H01L21/28

Semiconductor device with buried gate and method for fabricating the same

Abstract:

A semiconductor device includes buried gates formed over a substrate, storage node contact plugs which are formed over the substrate and include a pillar pattern and a line pattern disposed over the pillar pattern, and a bit line structure which is formed over the substrate and isolates adjacent ones of the storage node contact plugs from each other.

Abstract(Chinese):

半导体器件包括形成在衬底上的掩埋栅极，存储节点接触插塞，其形成在衬底上并且包括柱状图案和设置在柱状图案上的线图案;以及位线结构，其形成在衬底上并隔离相邻存储节点的接点彼此插头。

Public/Granted literature

US20140120710A1 SEMICONDUCTOR DEVICE WITH BURIED GATE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-05-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）