Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13398837Application Date: 2012-02-16
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Publication No.: US08975181B2Publication Date: 2015-03-10
- Inventor: Fenglian Li
- Applicant: Fenglian Li
- Applicant Address: CN
- Assignee: Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201110412676 20111212
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device and manufacture method thereof include a silicide material formed on a source region and a drain region on opposite sides of a gate, wherein the gate having sidewalls on both side surfaces is formed on a substrate. The gate has a first sidewall spacer and a second sidewall spacer on each sidewall, the first spacer has a horizontal portion and a vertical portion, the horizontal portion is located between the second sidewall spacer and the substrate, the vertical portion is located between the second sidewall spacer and the sidewalls. A protecting layer is selectively deposited on the silicide material.
Public/Granted literature
- US20130146950A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-06-13
Information query
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