Method of forming fine patterns

Invention Grant

US08975189B2 Method of forming fine patterns 有权

Title translation: 形成精细图案的方法

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Patent Title: Method of forming fine patterns
Patent Title (中): 形成精细图案的方法
Application No.: US13616101

Application Date: 2012-09-14
Publication No.: US08975189B2

Publication Date: 2015-03-10
Inventor: Chih Wei Lu , Chung-Ju Lee , Tien-I Bao
Applicant: Chih Wei Lu , Chung-Ju Lee , Tien-I Bao
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/311
IPC: H01L21/311 ; H01L21/3105

Abstract:

A method of forming a fine pattern comprises depositing a modifying layer on a substrate. A photoresist layer is deposited on the modifying layer, the photoresist layer having a first pattern. The modifying layer is etched according to the first pattern of the photoresist layer. A treatment is performed to the etched modifying layer to form a second pattern, the second pattern having a smaller line width roughness (LWR) and/or line edge roughness (LER) than the first pattern. The second pattern is then etched into the substrate.

Abstract(Chinese):

形成精细图案的方法包括在衬底上沉积修饰层。光致抗蚀剂层沉积在修饰层上，光致抗蚀剂层具有第一图案。根据光致抗蚀剂层的第一图案蚀刻修饰层。对蚀刻的修饰层进行处理以形成第二图案，第二图案具有比第一图案更小的线宽粗糙度（LWR）和/或线边缘粗糙度（LER）。然后将第二图案刻蚀成衬底。

Public/Granted literature

US20140080306A1 METHOD OF FORMING FINE PATTERNS Public/Granted day:2014-03-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀