Invention Grant
- Patent Title: Plasma processing method
- Patent Title (中): 等离子体处理方法
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Application No.: US14036240Application Date: 2013-09-25
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Publication No.: US08975190B2Publication Date: 2015-03-10
- Inventor: Ryoichi Yoshida
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2012-211371 20120925; JP2013-196824 20130924
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01J37/32
Abstract:
A plasma processing method includes a surface improving step of improving a surface of the photoresist film by performing plasma processing using a hydrogen-containing gas as a processing gas and an etching step of etching the SiON film by performing plasma processing using a processing gas including a gas containing a CHF-based gas and a chlorine-containing gas while using as a mask the photoresist film having the improved surface.
Public/Granted literature
- US20140083975A1 PLASMA PROCESSING METHOD Public/Granted day:2014-03-27
Information query
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