Invention Grant
- Patent Title: Nonvolatile variable resistance device having a semiconductor layer with higher percentage of unterminated semiconductor element than adjacent layers
- Patent Title (中): 非挥发性可变电阻器件具有比相邻层更高百分比的未终止半导体元件的半导体层
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Application No.: US14209169Application Date: 2014-03-13
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Publication No.: US08975611B2Publication Date: 2015-03-10
- Inventor: Takashi Yamauchi , Shosuke Fujii , Reika Ichihara
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-029540 20110215
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L47/00 ; H01L29/00 ; H01L29/04 ; H01L29/06 ; H01L23/52 ; G11C11/00 ; H01L45/00 ; H01L27/24
Abstract:
According to one embodiment, a nonvolatile variable resistance device includes a first electrode, a second electrode, a first layer, and a second layer. The second electrode includes a metal element. The first layer is arranged between the first electrode and the second electrode and includes a semiconductor element. The second layer is inserted between the second electrode and the first layer and includes the semiconductor element. The percentage of the semiconductor element being unterminated is higher in the second layer than in the first layer.
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