Invention Grant
- Patent Title: TFT with insert in passivation layer or etch stop layer
- Patent Title (中): TFT插入钝化层或蚀刻停止层
-
Application No.: US13932340Application Date: 2013-07-01
-
Publication No.: US08975625B2Publication Date: 2015-03-10
- Inventor: Yan Ye , Harvey You
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L21/283 ; H01L29/24
Abstract:
Embodiments disclosed herein generally relate to thin film transistors with one or more trenches to control the threshold voltage and off-current and methods of making the same. In one embodiment, a semiconductor device can include a substrate comprising a surface with a thin film transistor formed thereon, a first passivation layer formed over the thin film transistor, a trench formed within the first passivation layer and a second passivation layer formed over the first passivation layer and within the trench.
Public/Granted literature
- US20140339536A1 TFT WITH INSERT IN PASSIVATION LAYER OR ETCH STOP LAYER Public/Granted day:2014-11-20
Information query
IPC分类:
