Invention Grant
US08975650B2 Semiconductor light emitting device including a vertically arranged light transmitting layer and light emitting structure 有权
半导体发光器件包括垂直布置的透光层和发光结构

Semiconductor light emitting device including a vertically arranged light transmitting layer and light emitting structure
Abstract:
A semiconductor light emitting device that includes: a light emitting structure; an electrode layer under the light emitting structure; a light transmitting layer under of the light emitting structure; a reflective electrode layer connected to the electrode layer; and a conductive supporting member under the reflective electrode layer and electrically connected to the reflective electrode layer. The reflective electrode layer includes a first part in contact with an under surface of the electrode layer and a second part spaced apart from the electrode layer. A portion of the light transmitting layer is physically contacted with an outer side of the electrode layer and is physically contacted with the lower surface of the light emitting structure. The conductive supporting member has a thickness thicker than a thickness of the light transmitting layer.
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