Invention Grant
- Patent Title: Semiconductor light emitting device including a vertically arranged light transmitting layer and light emitting structure
- Patent Title (中): 半导体发光器件包括垂直布置的透光层和发光结构
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Application No.: US13563328Application Date: 2012-07-31
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Publication No.: US08975650B2Publication Date: 2015-03-10
- Inventor: Sang Youl Lee
- Applicant: Sang Youl Lee
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2007-0119967 20071123
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/40 ; H01L33/38 ; H01L33/32

Abstract:
A semiconductor light emitting device that includes: a light emitting structure; an electrode layer under the light emitting structure; a light transmitting layer under of the light emitting structure; a reflective electrode layer connected to the electrode layer; and a conductive supporting member under the reflective electrode layer and electrically connected to the reflective electrode layer. The reflective electrode layer includes a first part in contact with an under surface of the electrode layer and a second part spaced apart from the electrode layer. A portion of the light transmitting layer is physically contacted with an outer side of the electrode layer and is physically contacted with the lower surface of the light emitting structure. The conductive supporting member has a thickness thicker than a thickness of the light transmitting layer.
Public/Granted literature
- US20120292653A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2012-11-22
Information query
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