Invention Grant
- Patent Title: Shunting layer arrangement for LEDs
- Patent Title (中): LED分流层布置
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Application No.: US13812587Application Date: 2011-07-25
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Publication No.: US08975658B2Publication Date: 2015-03-10
- Inventor: Toni Lopez , Rafael Ignacio Aldaz
- Applicant: Toni Lopez , Rafael Ignacio Aldaz
- Applicant Address: NL Eindhoven
- Assignee: Koninklijke Philips N.V.
- Current Assignee: Koninklijke Philips N.V.
- Current Assignee Address: NL Eindhoven
- International Application: PCT/IB2011/053304 WO 20110725
- International Announcement: WO2012/020346 WO 20120216
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/38 ; H01L33/20 ; H01L33/40 ; H01L33/46

Abstract:
A shunting pattern on a surface of an LED die comprises an array of metal dots having widths that are on the order of 2Lt-5Lt (where Lt is transfer length) so as not to block a significant amount of light, yet have low contact resistance to the semiconductor current spreading layer. Contact resistance is not significantly reduced with widths greater than 2Lt. Each dot represents a current injection area. For a minimum 2Lt width and 50 square dots per mm2, the top surface area of an LED die will have about 1% of its surface covered by the dots. To cause the current to be evenly distributed over the top surface of the LED, the dots are connected with a grid of very thin metal connectors, having widths much less than 2Lt. In one embodiment, a wire bond electrode is formed near the middle of the top surface of the LED to create a more uniform current distribution.
Public/Granted literature
- US20130187193A1 SHUNTING LAYER ARRANGEMENT FOR LEDS Public/Granted day:2013-07-25
Information query
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