Invention Grant
- Patent Title: Nonvolatile pipe gate memory device
- Patent Title (中): 非易失性管闸存储器件
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Application No.: US12880891Application Date: 2010-09-13
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Publication No.: US08975683B2Publication Date: 2015-03-10
- Inventor: Ki-Hong Lee , Kwon Hong , Dae-Gyu Shin
- Applicant: Ki-Hong Lee , Kwon Hong , Dae-Gyu Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0051427 20100531
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/788 ; H01L27/115 ; H01L21/28 ; H01L29/66
Abstract:
A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell channel, and a pipe channel coupling the columnar cell channels and surrounding inner sidewalls and a bottom of the pipe channel hole.
Public/Granted literature
- US20110291177A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-12-01
Information query
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