Invention Grant
US08975687B2 Nonvolatile memory array with continuous charge storage dielectric stack
有权
具有连续电荷存储电介质叠层的非易失性存储器阵列
- Patent Title: Nonvolatile memory array with continuous charge storage dielectric stack
- Patent Title (中): 具有连续电荷存储电介质叠层的非易失性存储器阵列
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Application No.: US12813906Application Date: 2010-06-11
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Publication No.: US08975687B2Publication Date: 2015-03-10
- Inventor: Hang-Ting Lue , Tzu-Hsuan Hsu , Sheng-Chih Lai
- Applicant: Hang-Ting Lue , Tzu-Hsuan Hsu , Sheng-Chih Lai
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Kenta Suzue
- Priority: TW99110784A 20100407
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/792 ; G11C16/04 ; H01L21/28 ; H01L27/115 ; H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L21/265
Abstract:
An integrated circuit of an array of nonvolatile memory cells has a dielectric stack layer over the substrate, and implanted regions in the substrate under the dielectric stack layer. The dielectric stack layer is continuous over a planar region, that includes locations of the dielectric stack layer that store nonvolatile data, such that these locations are accessed by word lines/bit lines.
Public/Granted literature
- US20110303968A1 Nonvolatile Memory Array With Continuous Charge Storage Dielectric Stack Public/Granted day:2011-12-15
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