Invention Grant
US08975696B2 Lateral MOS power transistor having backside terminal electrode 有权
具有背面端子电极的侧面MOS功率晶体管

Lateral MOS power transistor having backside terminal electrode
Abstract:
A semiconductor component may include a semiconductor layer which has a front side and a back side, a first terminal electrode on the front side, a second terminal electrode on the back side, a first dopant region of a first conduction type on the front side, which is electrically connected to one of the terminal electrodes, a second dopant region of a second conduction type in the semiconductor layer, which is electrically connected to the other terminal electrode, a pn junction being formed between the first and second dopant regions, a dielectric layer on the back side between the semiconductor layer and the second terminal electrode, and the dielectric layer having an opening through which an electrical connection between the second terminal electrode and the first or second dopant region is passed.
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