Invention Grant
- Patent Title: Lateral MOS power transistor having backside terminal electrode
- Patent Title (中): 具有背面端子电极的侧面MOS功率晶体管
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Application No.: US13108711Application Date: 2011-05-16
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Publication No.: US08975696B2Publication Date: 2015-03-10
- Inventor: Oliver Haeberlen , Franz Hirler , Maximilian Roesch
- Applicant: Oliver Haeberlen , Franz Hirler , Maximilian Roesch
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: SpryIP, LLC
- Priority: DE102010020884 20100518
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L29/78 ; H01L29/417 ; H01L29/861 ; H01L29/06 ; H01L29/10 ; H01L29/40

Abstract:
A semiconductor component may include a semiconductor layer which has a front side and a back side, a first terminal electrode on the front side, a second terminal electrode on the back side, a first dopant region of a first conduction type on the front side, which is electrically connected to one of the terminal electrodes, a second dopant region of a second conduction type in the semiconductor layer, which is electrically connected to the other terminal electrode, a pn junction being formed between the first and second dopant regions, a dielectric layer on the back side between the semiconductor layer and the second terminal electrode, and the dielectric layer having an opening through which an electrical connection between the second terminal electrode and the first or second dopant region is passed.
Public/Granted literature
- US20110284958A1 Semiconductor Component Public/Granted day:2011-11-24
Information query
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