Invention Grant
- Patent Title: Control fin heights in FinFET structures
- Patent Title (中): 控制FinFET结构的翅片高度
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Application No.: US14132299Application Date: 2013-12-18
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Publication No.: US08975698B2Publication Date: 2015-03-10
- Inventor: Yi-Shien Mor , Hsiao-Chu Chen , Mu-Chi Chiang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/088 ; H01L29/66 ; H01L29/78 ; H01L21/8234
Abstract:
A device includes a substrate, an isolation region at a top surface of the substrate, and a semiconductor fin over the isolation region. The semiconductor fin has a fin height smaller than about 400 Å, wherein the fin height is measured from a top surface of the semiconductor fin to a top surface of the isolation region.
Public/Granted literature
- US20140103453A1 Control Fin Heights in FinFET Structures Public/Granted day:2014-04-17
Information query
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