Invention Grant
- Patent Title: Photodetector and method for manufacturing the same
- Patent Title (中): 光电检测器及其制造方法
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Application No.: US13537452Application Date: 2012-06-29
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Publication No.: US08975715B2Publication Date: 2015-03-10
- Inventor: Thoralf Kautzsch
- Applicant: Thoralf Kautzsch
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/18 ; H01L31/062

Abstract:
A photodetector includes a substrate and an insulating arrangement formed in the substrate. The insulating arrangement electrically insulates a confined region of the substrate. The confined region is configured to generate free charge carriers in response to an irradiation. The photodetector further includes a read-out electrode arrangement configured to provide a photocurrent formed by at least a portion of the free charge carriers that are generated in response to the irradiation. The photodetector also includes a biasing electrode arrangement that is electrically insulated against the confined region by means of the insulating arrangement. The biasing electrode arrangement is configured to cause an influence on a spatial charge carrier distribution within the confined region so that fewer of the free charge carriers recombine at boundaries of the confined region compared to an unbiased state.
Public/Granted literature
- US20130062502A1 PHOTODETECTOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-03-14
Information query
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