Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13799218Application Date: 2013-03-13
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Publication No.: US08975732B2Publication Date: 2015-03-10
- Inventor: Akira Tojo , Kazuhito Higuchi , Tomohiro Iguchi , Masako Fukumitsu , Daisuke Hiratsuka , Akihiro Sasaki , Masayuki Uchida
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-057781 20120314; JP2013-006553 20130117
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/50 ; H01L23/051 ; H01L23/498 ; H01L23/538 ; H01L23/00
Abstract:
According to one embodiment, a semiconductor device includes, a chip including a first chip electrode on a first surface on one side, and a second chip electrode on a second surface on the other side, an electrically conductive frame provided on a side periphery of the chip, a rewiring configured to electrically connect the second chip electrode and the electrically conductive frame on the other side of the chip, and an insulation side portion provided between the electrically conductive frame and the side periphery of the chip.
Public/Granted literature
- US20130241040A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-09-19
Information query
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