Invention Grant
- Patent Title: Semiconductor device and method for driving semiconductor device
- Patent Title (中): 用于驱动半导体器件的半导体器件和方法
-
Application No.: US13961066Application Date: 2013-08-07
-
Publication No.: US08975930B2Publication Date: 2015-03-10
- Inventor: Shunpei Yamazaki , Jun Koyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2012-177863 20120810
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H01L27/06 ; H03K3/012 ; H01L27/12 ; H03K19/00 ; H01L27/092 ; H01L29/786

Abstract:
Direct-path current is reduced in a semiconductor device including CMOS circuits. One embodiment of the present invention is a method for driving a semiconductor device that includes a first CMOS circuit between power supply lines, a first transistor between the power supply lines, a second CMOS circuit between the power supply lines, and a second transistor between an output terminal of the first CMOS circuit and an input terminal of the second CMOS circuit. The first transistor and the second transistor each have lower off-state current than a transistor included in the first CMOS circuit. In a period during which the voltage of a first signal input to the first CMOS circuit is changed, a second signal is input to the first transistor and the second transistor to turn off the first transistor and the second transistor.
Public/Granted literature
- US20140043093A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE Public/Granted day:2014-02-13
Information query