Invention Grant
US08975944B2 Level shift circuit utilizing resistance in semiconductor substrate
有权
利用半导体衬底中的电阻的电平移位电路
- Patent Title: Level shift circuit utilizing resistance in semiconductor substrate
- Patent Title (中): 利用半导体衬底中的电阻的电平移位电路
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Application No.: US13989784Application Date: 2011-09-09
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Publication No.: US08975944B2Publication Date: 2015-03-10
- Inventor: Masashi Akahane
- Applicant: Masashi Akahane
- Applicant Address: JP Kawasaki-Shi
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2010-262595 20101125
- International Application: PCT/JP2011/005099 WO 20110909
- International Announcement: WO2012/070174 WO 20120531
- Main IPC: H03L5/00
- IPC: H03L5/00 ; H03K17/687 ; H03K3/356 ; H03K17/0412

Abstract:
A level shift circuit does not affect delay time, regardless of the size of resistor resistance value. The level shift circuit includes first and second series circuits wherein first and second resistors and first and second switching elements are connected in series, rise detector circuits that compare the rise potentials of output signals of the first and second series circuits with a predetermined threshold value, and output first and second output signals, which are pulse outputs of a constant duration, when the threshold value is exceeded, and third and fourth switching elements connected in parallel to the first and second resistors respectively. The gate terminals of the third and fourth switching elements are connected to the rise detector circuits, and the third and fourth switching elements are turned on by the first and second output signals respectively.
Public/Granted literature
- US20130278319A1 LEVEL SHIFT CIRCUIT UTILIZING RESISTANCE IN SEMICONDUCTOR SUBSTRATE Public/Granted day:2013-10-24
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