Invention Grant
- Patent Title: Transformer with bypass capacitor
- Patent Title (中): 带旁路电容的变压器
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Application No.: US14017612Application Date: 2013-09-04
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Publication No.: US08975979B2Publication Date: 2015-03-10
- Inventor: Hsiao-Tsung Yen , Yu-Ling Lin , Ying-Ta Lu , Chin-Wei Kuo , Ho-Hsiang Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Agent Steven E. Koffs
- Main IPC: H03H7/42
- IPC: H03H7/42 ; H01L23/522 ; H01F17/00 ; H01F17/02

Abstract:
An electronic device comprises first, second and third inductors connected in series and formed in a metal layer over a semiconductor substrate. The first and second inductors have a mutual inductance with each other. The second and third inductors having a mutual inductance with each other. A first capacitor has a first electrode connected to a first node. The first node is conductively coupled between the first and second inductors. A second capacitor has a second electrode connected to a second node. The second node is conductively coupled between the second and third inductors.
Public/Granted literature
- US20140041173A1 TRANSFORMER WITH BYPASS CAPACITOR Public/Granted day:2014-02-13
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