Invention Grant
- Patent Title: Protective device
- Patent Title (中): 保护装置
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Application No.: US13291884Application Date: 2011-11-08
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Publication No.: US08976001B2Publication Date: 2015-03-10
- Inventor: Kuo-Shu Chen , Chung-Hsiung Wang
- Applicant: Kuo-Shu Chen , Chung-Hsiung Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Cyntec Co., Ltd.
- Current Assignee: Cyntec Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: HDLS IPR Services
- Agent Chun-Ming Shih
- Priority: TW99221646U 20101108
- Main IPC: H01H85/44
- IPC: H01H85/44 ; H01H85/044 ; H01H85/055 ; H01H85/046 ; H01H85/041 ; H01H85/02 ; H01H85/46 ; H01H69/02

Abstract:
A protective device includes a substrate, two first electrodes, a low-melting point metal layer and an assisting layer. The first electrodes are respectively arranged at two opposite sides of the substrate. The low melting point metal layer is arranged over the two first electrodes. The assisting layer is formed on the low melting point metal layer. The liquidus temperature of the assisting layer is below the liquidus temperature of the low melting point metal layer, and the liquidus temperature of the assisting layer is not below a predetermined temperature which is below the maximum working temperature of reflow soldering process by 25 degrees.
Public/Granted literature
- US20120112871A1 PROTECTIVE DEVICE Public/Granted day:2012-05-10
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