Invention Grant
- Patent Title: Semiconductor memory device for pseudo-random number generation
- Patent Title (中): 用于伪随机数生成的半导体存储器件
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Application No.: US13985436Application Date: 2012-02-17
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Publication No.: US08976586B2Publication Date: 2015-03-10
- Inventor: Yuji Nagai , Atsushi Inoue , Yoshikazu Takeyama
- Applicant: Yuji Nagai , Atsushi Inoue , Yoshikazu Takeyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-125282 20110603
- International Application: PCT/JP2012/054497 WO 20120217
- International Announcement: WO2012/164986 WO 20121206
- Main IPC: G11C16/22
- IPC: G11C16/22 ; G06F7/58

Abstract:
According to one embodiment, a semiconductor memory device includes a memory cell array including a plurality of memory cells, a random number generation circuit configured to generate a random number, and a controller configured to control the memory cell array and the random number generation circuit. The random number generation circuit includes a random number control circuit configured to generate a random number parameter based on data which is read out from the memory cell by a generated control parameter, and a pseudo-random number generation circuit configured to generate the random number by using the random number parameter as a seed value.
Public/Granted literature
- US20140146607A1 SEMICONDUCTOR MEMORY DEVICE FOR PSEUDO-RANDOM NUMBER GENERATION Public/Granted day:2014-05-29
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