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US08976586B2 Semiconductor memory device for pseudo-random number generation 有权
用于伪随机数生成的半导体存储器件

Semiconductor memory device for pseudo-random number generation
Abstract:
According to one embodiment, a semiconductor memory device includes a memory cell array including a plurality of memory cells, a random number generation circuit configured to generate a random number, and a controller configured to control the memory cell array and the random number generation circuit. The random number generation circuit includes a random number control circuit configured to generate a random number parameter based on data which is read out from the memory cell by a generated control parameter, and a pseudo-random number generation circuit configured to generate the random number by using the random number parameter as a seed value.
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