Invention Grant
- Patent Title: High voltage generation circuit and semiconductor device including the same
- Patent Title (中): 高电压发生电路和包括其的半导体器件
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Application No.: US13549892Application Date: 2012-07-16
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Publication No.: US08976605B2Publication Date: 2015-03-10
- Inventor: Je Il Ryu
- Applicant: Je Il Ryu
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0085601 20110826
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G05F3/02 ; G11C5/14 ; G11C8/08

Abstract:
A high voltage generation circuit includes a plurality of pumps configured to generate a final pump voltage, a plurality of switches configured to couple the pumps to various nodes, a voltage division circuit configured to divide the final pump voltage from the pumps interconnected by the switches, and outputting a divided voltage, a section signal generation circuit configured to generate a plurality of section signals by comparing the divided voltage with each of different reference voltages, and a section signal combination circuit configured to generate enable signals for controlling the switches by combining the section signals.
Public/Granted literature
- US20130051159A1 HIGH VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2013-02-28
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