Invention Grant
- Patent Title: Voltage generating circuit and semiconductor device including the voltage generating circuit
- Patent Title (中): 电压产生电路和包括电压产生电路的半导体器件
-
Application No.: US13783055Application Date: 2013-03-01
-
Publication No.: US08976606B2Publication Date: 2015-03-10
- Inventor: Noriyasu Kumazaki , Masafumi Uemura , Tatsuro Midorikawa
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2012-122513 20120529
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G05F3/02 ; G11C16/06 ; G11C11/4074

Abstract:
A voltage generating circuit includes first and second step-up circuits, each having first and second input terminals and an output terminal and configured to increase a voltage level of an input signal supplied through the first input terminal and output the signal with the increased voltage level through the output terminal. The second input terminal of the first step-up circuit is connected to the output terminal of the second step-up circuit and the second input terminal of the second step-up circuit is connected to the output terminal of the first step-up circuit. The voltage generating circuit may also include third and fourth step-up circuits and fifth and sixth step-up circuits having similar configurations.
Public/Granted literature
- US20130322180A1 VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE VOLTAGE GENERATING CIRCUIT Public/Granted day:2013-12-05
Information query