Invention Grant
US08976613B2 Differential current sensing scheme for magnetic random access memory
有权
磁性随机存取存储器的差分电流检测方案
- Patent Title: Differential current sensing scheme for magnetic random access memory
- Patent Title (中): 磁性随机存取存储器的差分电流检测方案
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Application No.: US13948432Application Date: 2013-07-23
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Publication No.: US08976613B2Publication Date: 2015-03-10
- Inventor: Sergiy Romanovskyy
- Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C11/16 ; G11C7/06 ; G11C11/4091 ; G11C11/22

Abstract:
A circuit for a differential current sensing scheme includes first and second cell segments, first and second reference cells, and first and second current sense amplifiers. The first and second reference cells are configured to store opposite logic values. The first and second current sense amplifiers are each configured with a first node and a second node for currents therethrough to be compared with each other. A cell of the first cell segment and a cell of the second cell segment are coupled to the first nodes of the first and second current sense amplifiers, respectively, and the first and second reference cells are coupled to both the second nodes of the first and second current sense amplifiers.
Public/Granted literature
- US20150029794A1 DIFFERENTIAL CURRENT SENSING SCHEME FOR MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2015-01-29
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