Invention Grant
- Patent Title: Multi-time programmable memory
- Patent Title (中): 多时间可编程存储器
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Application No.: US13894047Application Date: 2013-05-14
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Publication No.: US08976616B2Publication Date: 2015-03-10
- Inventor: Myron Buer
- Applicant: Broadcom Corporation
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G11C17/18
- IPC: G11C17/18
Abstract:
Methods and systems that extend the capability of fuse elements, anti-fuse elements, and combinations thereof to enable multi-time programmable memory elements are provided. Accordingly, significantly reduced area requirements and control circuitry complexity of memory elements is enabled. The provided methods and systems can be used in non-volatile memory storage, and are suitable for use in system on chip (SoC) products.
Public/Granted literature
- US20130250647A1 Multi-Time Programmable Memory Public/Granted day:2013-09-26
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