Invention Grant
- Patent Title: Multi-wavelength semiconductor laser device
- Patent Title (中): 多波长半导体激光器件
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Application No.: US13421260Application Date: 2012-03-15
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Publication No.: US08976832B2Publication Date: 2015-03-10
- Inventor: Yoshihiko Takahashi , Fumitake Oikawa
- Applicant: Yoshihiko Takahashi , Fumitake Oikawa
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2011-075471 20110330; JP2011-116106 20110524
- Main IPC: H01S5/00
- IPC: H01S5/00 ; G11B7/1275 ; H01S5/028 ; H01S5/40 ; H01S5/026 ; H01S5/22 ; H01S5/343
Abstract:
A multi-wavelength semiconductor laser device includes: first and second device sections monolithically formed on a substrate; and a rear end face film formed together on a rear end face of each of the first and second device sections. The first device section is a light-emitting device section having an oscillation wavelength of λ1. The second device section is a light-emitting device section having an oscillation wavelength of λ2 (λ1
Public/Granted literature
- US20120250718A1 MULTI-WAVELENGTH SEMICONDUCTOR LASER DEVICE Public/Granted day:2012-10-04
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