Invention Grant
US08977831B2 Flash backed DRAM module storing parameter information of the DRAM module in the flash
有权
闪存支持的DRAM模块在闪存中存储DRAM模块的参数信息
- Patent Title: Flash backed DRAM module storing parameter information of the DRAM module in the flash
- Patent Title (中): 闪存支持的DRAM模块在闪存中存储DRAM模块的参数信息
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Application No.: US12369046Application Date: 2009-02-11
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Publication No.: US08977831B2Publication Date: 2015-03-10
- Inventor: Mark Moshayedi , Douglas Finke
- Applicant: Mark Moshayedi , Douglas Finke
- Applicant Address: US CA Santa Ana
- Assignee: STEC, Inc.
- Current Assignee: STEC, Inc.
- Current Assignee Address: US CA Santa Ana
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- Main IPC: G06F12/16
- IPC: G06F12/16 ; G11C5/14 ; G06F3/06 ; G06F1/30

Abstract:
A device includes volatile memory; one or more non-volatile memory chips, each of which is for storing data moved from the volatile-memory; an interface for connecting to a backup power source arranged to temporarily power the volatile memory upon a loss of power from a primary power source; a controller in communication with the volatile memory and the non-volatile memory, wherein: the controller is programmed to move data from the volatile memory to the non-volatile memory chips upon a loss of power of the primary power source of the volatile memory; and parameters describing the volatile memory are stored in at least one of the non-volatile memory chips that store the data moved from the volatile memory. In some aspects the parameters include serial presence detect information.
Public/Granted literature
- US20100205348A1 FLASH BACKED DRAM MODULE STORING PARAMETER INFORMATION OF THE DRAM MODULE IN THE FLASH Public/Granted day:2010-08-12
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