Invention Grant
- Patent Title: Reducing current leakage in L1 program memory
- Patent Title (中): 降低L1程序存储器中的电流泄漏
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Application No.: US13111617Application Date: 2011-05-19
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Publication No.: US08977878B2Publication Date: 2015-03-10
- Inventor: Ramakrishnan Venkatasubramanian , Hung Vi Ong
- Applicant: Ramakrishnan Venkatasubramanian , Hung Vi Ong
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Robert D. Marshall, Jr.; Frederick J. Telecky, Jr.
- Main IPC: G06F1/32
- IPC: G06F1/32 ; G06F1/00 ; G06F1/26 ; G06F13/00 ; G11C5/14

Abstract:
An embodiment of the invention provides a method for decreasing power in an L1 program memory of a multi-level memory system. The power is decreased by enabling a sleep mode in the L1 program memory. The sleep mode determines when the L1 program memory will not be accessed for a period of time. When it is determined that the L1 program memory will not be accessed for a period of time, the voltage applied to the memory array is reduced. When it is determined that the L1 program memory will be accessed, the voltage applied to the memory array is increased.
Public/Granted literature
- US20120297225A1 Reducing Current Leakage in L1 Program Memory Public/Granted day:2012-11-22
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