Invention Grant
- Patent Title: Method and apparatus for repairing memory
- Patent Title (中): 修复记忆体的方法和装置
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Application No.: US11745244Application Date: 2007-05-07
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Publication No.: US08977912B2Publication Date: 2015-03-10
- Inventor: Chun-Hsiung Hung , Han-Sung Chen , Nai-Ping Kuo , Su-Chueh Lo
- Applicant: Chun-Hsiung Hung , Han-Sung Chen , Nai-Ping Kuo , Su-Chueh Lo
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Kenta Suzue
- Main IPC: G11C29/24
- IPC: G11C29/24 ; G11C29/56 ; G11C29/00 ; G11C29/54

Abstract:
Methods and apparatuses are disclosed in which a repair instruction, such as from a tester, causes an integrated circuit undergoing testing to substitute defective locations of a first set of memory cells in the integrated circuit with a second set of memory cells in the integrated circuit, despite the repair instruction omitting the defective locations of the first set of memory cells of the integrated circuit.
Public/Granted literature
- US20080282107A1 Method and Apparatus for Repairing Memory Public/Granted day:2008-11-13
Information query