Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US14233669Application Date: 2013-06-20
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Publication No.: US08986458B2Publication Date: 2015-03-24
- Inventor: Shinya Akano
- Applicant: Chugai Ro Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Chugai Ro Co., Ltd.
- Current Assignee: Chugai Ro Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2012-180141 20120815
- International Application: PCT/JP2013/066976 WO 20130620
- International Announcement: WO2014/027508 WO 20140220
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C14/00 ; C23F1/00 ; H01L21/306 ; H01J37/32 ; C23C14/32 ; C23C14/54 ; H05H1/26

Abstract:
The present invention provides a plasma processing apparatus capable of bringing plasma close to a processing target and separating the plasma from the processing target. The plasma processing apparatus 1 according to the present invention has a chamber internally having a holding space 2a in which a processing target object 5 is held, and a plasma space 2b in which plasma is to be formed, a plasma gun 3 for emitting electrons into the plasma space 2b to form the plasma, and at least one pair of position-adjustable opposed magnets 4 for forming a magnetic flux passing across the chamber 2, between the holding space 2a and the plasma space 2b.
Public/Granted literature
- US20140238301A1 PLASMA PROCESSING APPARATUS Public/Granted day:2014-08-28
Information query
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