Invention Grant
- Patent Title: Pattern formation method and polymer alloy base material
- Patent Title (中): 图案形成方法和聚合物合金基材
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Application No.: US13750007Application Date: 2013-01-25
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Publication No.: US08986488B2Publication Date: 2015-03-24
- Inventor: Shigeki Hattori , Koji Asakawa , Hiroko Nakamura , Ryota Kitagawa , Yuriko Seino , Masahiro Kanno , Momoka Higa
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2010-169279 20100728
- Main IPC: B32B38/04
- IPC: B32B38/04 ; B81C1/00 ; H01L21/308 ; H01L21/033
Abstract:
According to one embodiment, a pattern formation method is provided, the pattern formation includes: laminating a self-assembled monolayer and a polymer film on a substrate; causing chemical bonding between the polymer film and the self-assembled monolayer by irradiation with an energy beam to form a polymer surface layer on the self-assembled monolayer; and forming on the polymer surface layer a polymer alloy having a pattern of phase-separated structures.
Public/Granted literature
- US20130133825A1 PATTERN FORMATION METHOD AND POLYMER ALLOY BASE MATERIAL Public/Granted day:2013-05-30
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