Invention Grant
- Patent Title: Etching apparatus
- Patent Title (中): 蚀刻装置
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Application No.: US13717812Application Date: 2012-12-18
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Publication No.: US08986493B2Publication Date: 2015-03-24
- Inventor: Shigeru Tahara , Masaru Nishino
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2005-087889 20050325
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/306 ; H01J37/32 ; H01L21/311
Abstract:
When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion.
Public/Granted literature
- US20130118688A1 ETCHING APPARATUS Public/Granted day:2013-05-16
Information query
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