Invention Grant
- Patent Title: Method for selective under-etching of porous silicon
- Patent Title (中): 选择性蚀刻多孔硅的方法
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Application No.: US12716785Application Date: 2010-03-03
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Publication No.: US08987032B2Publication Date: 2015-03-24
- Inventor: Ismail I. Kashkoush
- Applicant: Ismail I. Kashkoush
- Assignee: Akrion Systems, LLC
- Current Assignee: Akrion Systems, LLC
- Agency: The Belles Group, P.C.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L31/18 ; H01L31/068 ; H01L21/311 ; H01L31/028

Abstract:
A method for making a solar cell is disclosed. In accordance with the method of the present invention a composite wafer is formed. The composite layer includes a single crystal silicon wafer, a silicon-based device layer and sacrificial porous silicon sandwiched therebetween. The composite wafer is treated to an aqueous etchant maintained below ambient temperatures to selectively etch the sacrificial porous silicon and release or undercut the silicon-based layer from the single crystal silicon wafer. The released silicon device layer is attached to a substrate to make a solar cell and the released single crystal silicon wafer is reused to make additional silicon device layer.
Public/Granted literature
- US20100227432A1 METHOD FOR SELECTIVE UNDER-ETCHING OF POROUS SILICON Public/Granted day:2010-09-09
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