Invention Grant
US08987077B2 Group III nitride semiconductor device, production method therefor, and power converter
有权
III族氮化物半导体器件及其制造方法和功率转换器
- Patent Title: Group III nitride semiconductor device, production method therefor, and power converter
- Patent Title (中): III族氮化物半导体器件及其制造方法和功率转换器
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Application No.: US14011573Application Date: 2013-08-27
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Publication No.: US08987077B2Publication Date: 2015-03-24
- Inventor: Toru Oka
- Applicant: Toyoda Gosei Co., Ltd.
- Applicant Address: JP Kiyosu-Shi, Aichi-Ken
- Assignee: Toyota Gosei Co., Ltd.
- Current Assignee: Toyota Gosei Co., Ltd.
- Current Assignee Address: JP Kiyosu-Shi, Aichi-Ken
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-219254 20090924
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/778 ; H01L29/861 ; H01L23/29 ; H01L23/31 ; H01L29/20 ; H01L29/40 ; H01L29/423
Abstract:
A method for producing a semiconductor device, includes forming a first carrier transport layer including a Group III nitride semiconductor, forming a mask on a region of the first carrier transport layer, selectively re-growing a second carrier transport layer on an unmasked region of the first carrier transport layer, the second carrier transport layer including a Group III nitride semiconductor, and selectively growing a carrier supply layer on the second carrier transport layer, the carrier supply layer including a Group III nitride semiconductor having a bandgap different from that of the Group III nitride semiconductor of the second carrier transport layer.
Public/Granted literature
- US20140004669A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE, PRODUCTION METHOD THEREFOR, AND POWER CONVERTER Public/Granted day:2014-01-02
Information query
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